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TWEOS61089-17
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SCHEMATIC DIAGRAM:
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1.
Features
2.
Description
This device has
been especially designed to protect subscriber line card
interfaces (SLIC) against transient overvoltages.
Positive overloads are clipped with 2 diodes. Negative
surges are suppressed by 2 thyristors, their breakdown voltage
being referenced to -VBAT through the gate
This
component presents a very low gate triggering current
(IGT) in order to
reduce the current consumption on printed circuit board during
the firing phase.
A particular attention has been
given to the internal wire bonding. The "4-point"
configuration ensures reliable protection, eliminating the
overvoltage introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very
fast transients.
3. Bellcore
TR-NWT-001089
|
‘1089 TEST CLAUSE
AND TEST # |
Voltage
waveform (μs) |
Required peak
current
(A)
|
|
4.5.8 Second-Level 1
|
2/10μs |
120 |
|
4.5.7 first-Level 3
|
10/1000μs |
30
|
|
‘1089 TEST CLAUSE
AND TEST # |
60 Hz power fault
time |
Required peak
current
(A)
|
|
4.5.13 Second-Level 2
|
0.5s |
6.5 |
|
4.5.13 Second-Level 2
|
1s |
4.5 |
|
4.5.13 Second-Level 2
|
5s |
2.4 |
|
4.5.13 Second-Level 1
|
30s |
1.3 |
|
4.5.13 Second-Level 1
|
900s |
0.72
|
4. Absolute
Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
Ipp |
Non-repetitive peak on-state pulse
current
10/1000μs
5/310μs
2/10μs |
30
40
120
|
A |
|
ITSM |
Non repetitive surge peak on-state
current (sinusoidal) 60Hz
0.5s
1s
5s
30s
900s |
6.5
4.5
2.4
1.3
0.72
|
A
|
|
VDRM
VGKRM |
Maximum voltage LINE/GROUND
Maximum voltage GATE/LINE |
-170
-167 |
V
|
|
TA
TSTG
T J
T L |
Operating free-air temperature
range
Storage temperature range
Junction
temperature
Maximum lead temperature for soldering
during 10S |
-40 to +85
-40 to +150
-40 to +150
260 |
°c |
5. Thermal
Resistance
|
Symbol |
Parameter |
Value |
Unit |
|
|
Junction to ambient |
120 |
|
6. Electrical
Characteristics 
7. Parameters
Related to The Diode
|
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit. |
|
VF forward
voltage |
IF=5A,
tw=200 μs |
|
|
3 |
V |
|
VFRM peak
forward recovery voltage |
2/10 μs, IF=100A, Rs=50Ω ,
di/dt=80A |
|
|
10 |
V |
8. Parameters
Related to The Protection Thyristor
|
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit. |
|
ID
off-state current |
VD=-170V, VGK=0 |
TJ=25°c |
|
|
-5 |
μ A |
|
TJ=85°c |
|
|
-50 |
μ A |
|
VBO
breakover voltage |
2/10 μ s,
IT=-100A,
Rs=50 Ω ,
VGG=
-100V, CG
=80A/μ s
|
|
|
-112 |
V |
|
IH holding current |
IT=-1A, di/dt=1A/ms, VGG=-100V |
-150 |
|
|
mA |
|
IGKS gate reverse current |
VGG=VGK=-165V, VKA=0 |
TJ=25°c |
|
|
-5 |
μ A |
|
TJ=85°c |
|
|
-50 |
μ A |
|
IGT gate trigger current |
IT=3A, tp(g) ≥ 20
μs,VGG=-100V |
|
|
5 |
mA |
|
VGT gate trigger voltage |
IT=3A, tp(g) ≥ 20
μs,VGG=-100V |
|
|
2.5 |
V |
|
CKA anode-cathode off-state
capacitance |
f=1MHz,Vd=1V,IG=0 |
VD=-3V |
|
|
110 |
pF |
|
VD=-48V |
|
|
55 |
pF |
9.
Electrical Parameters
10. Product
Dimensions
11. Package
Information
Tape &
Real: 2500 pcs
|
= -167V
max.
and 
= 5ma max
= 40A for 10/700µs
surge
= 150mA
min.
